Fabrication method of semiconductor circuit device

ABSTRACT

When a semiconductor wafer is formed thin, warping of the wafer is to be prevented. Semiconductor elements are formed on a semiconductor wafer, a protective tape is affixed to a surface of the semiconductor wafer, and a back side of the semiconductor wafer is ground to a predetermined thickness. A die bonding film is affixed to the back side of the semiconductor wafer and further a dicing tape is affixed to the wafer back side. The dicing tape affixed to the semiconductor wafer is held by a holding jig. The protective tape is peeled off from the wafer surface and the die bonding film is heated to improve the adherence between the semiconductor wafer and the die bonding film. The semiconductor wafer is subjected to dicing for separation into individual semiconductor chips. The semiconductor chips are die-bonded in a predetermined number onto a wiring substrate to fabricate a semiconductor device.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a semiconductor device fabricating technique and more particularly to a technique which is effectively applicable to a semiconductor device fabricating technique in which an adhesive sheet is affixed to a wafer.

[0002] In Japanese Unexamined Patent Publication No. Hei 10(1998)-112494 there is described a technique an adhesive sheet for die bonding is affixed to a semiconductor wafer. According to the technique disclosed therein, the affixing of the adhesive sheet to the semiconductor wafer is performed after peeling off a release film from the adhesive sheet, and the adhesive sheet portion affixed to an outer periphery portion of the semiconductor wafer is cut off (see Patent Literature 1).

[0003] In Japanese Unexamined Patent Publication No. 2002-26039 there is disclosed a technique in which a protective tape for back grinding is affixed to a surface of a wafer, then after back grinding, an adhesive tape for die bonding is affixed to a back side of the wafer with the protective tape for back grinding affixed thereto, thereafter the protective tape for back grinding is peeled off, followed by probing, then a protective film for dicing is affixed to the adhesive tape for die bonding, followed by dicing and subsequent die bonding with use of the adhesive tape for die bonding (see Patent Literature 2).

[0004] In Japanese Unexamined Patent Publication No. Hei 8(1996)-181197 there is disclosed a technique in which a protective tape is affixed to a surface of a wafer, then a back side of the wafer with the protective tape affixed thereto is subjected to grinding, thereafter a dicing tape is affixed to the back side of the wafer with the protective tape affixed thereto, and a holding jig for holding the dicing tape is affixed to an around-the-wafer portion of the dicing tape with the wafer affixed thereto, followed by dicing, (see Patent Literature 3).

[0005] In Japanese Unexamined Patent Publication No. Hei 7 (1995)-22358 there is disclosed a technique wherein a tape for protection and reinforcement is affixed to a surface of a wafer, then in this state a back side of the wafer is subjected to grinding and is then affixed to a dicing tape, thereafter the tape for protection and reinforcement is peeled off and dicing is performed (see Patent Literature 4).

[0006] [Patent Literature 1]

[0007] Japanese Unexamined Patent Publication No. Hei 10(1998)-112494

[0008] [Patent Literature 2]

[0009] Japanese Unexamined Patent Publication No. 2002-26039

[0010] [Patent Literature 3]

[0011] Japanese Unexamined Patent Publication No. Hei 8(1996)-181197

[0012] [Patent Literature 4]

[0013] Japanese Unexamined Patent Publication No. Hei 7(1995)-22358

SUMMARY OF THE INVENTION

[0014] If the thickness of a semiconductor wafer is made small for the purpose of fabricating a thin semiconductor device, the semiconductor wafer becomes easier to warp and easier to crack or chip during manufacture or conveyance between manufacturing steps, with consequent lowering of the semiconductor device manufacturing yield and increase of the semiconductor device manufacturing cost.

[0015] According to the method wherein an adhesive sheet is affixed to a semiconductor wafer after peel-off of the release film, there arises a problem that, at the time of affixing the adhesive sheet to the wafer, the affixed adhesive sheet is apt to be wrinkled due to, for example, an ill-tension balance of the adhesive sheet. Once the adhesive sheet is wrinkled, re-affixing of the adhesive sheet is difficult and therefore it is necessary to take off the semiconductor wafer concerned as being defective, thus causing a remarkable increase of the semiconductor device manufacturing cost.

[0016] According to the method wherein the protective tape for dicing is affixed onto the adhesive tape for die bonding after peel-off of the protective tape for back grinding from the wafer, only the adhesive tape for die bonding is present on the wafer, with consequent fear of the wafer being warped before or during affixing of the protective tape for dicing. Once the semiconductor wafer warps, it becomes easier for the wafer to be cracked or chipped during manufacture of the semiconductor device or during conveyance between manufacturing steps. It also becomes easier for the wafer to be flawed. The occurrence of such a flaw results in a lowering of the semiconductor device manufacturing yield and an increase of the semiconductor device manufacturing cost.

[0017] According to the method wherein the adhesive layer for die bonding is not formed on the wafer, but a dicing tape is affixed to the wafer, it is necessary that a semiconductor chip be subjected to die bonding with use of silver paste or the like, with the result that the manufacturing process becomes complicated and the semiconductor device manufacturing cost increases.

[0018] It is an object of the present invention to provide a semiconductor device fabricating method capable of preventing the warp of a wafer.

[0019] It is another object of the present invention to provide a semiconductor device manufacturing method capable of reducing the semiconductor device manufacturing cost.

[0020] The above and other objects and novel features of the present invention will become apparent from the following description and the accompanying drawings.

[0021] Typical modes of the present invention disclosed herein will be outlined below.

[0022] A semiconductor device manufacturing method according to the present invention comprises affixing a protective tape to a first surface of a wafer, grinding a second surface of the wafer located on the side opposite to the first surface, affixing a die bonding film to the second surface of the wafer, affixing a dicing tape onto the die bonding film on the second surface of the wafer, peeling off the protective tape from the first surface of the wafer, and dicing the wafer.

[0023] Thus, the dicing tape is affixed to the wafer in an affixed state of the protective sheet for back grinding to the wafer to prevent warping, etc. of the wafer.

[0024] Further, in a semiconductor device fabricating method according to the present invention, a laminate of a die bonding film and a separator film is affixed to the back side of a wafer in such a manner that the die bonding film faces inside, then the separator film is peeled off, and the die bonding film is cut off along the outer periphery of the wafer.

[0025] By peeling off the separator film after affixing the die bonding film together with the separator film to the back side of the wafer, the separator film is prevented from being wrinkled.

BRIEF DESCRIPTION OF THE DRAWINGS

[0026]FIG. 1 is a process flow chart showing a semiconductor device manufacturing process according to an embodiment of the present invention;

[0027]FIG. 2 is a sectional view of a step in the semiconductor device manufacturing process;

[0028]FIG. 3 is a sectional view of a step in the semiconductor device manufacturing process which follows the step of FIG. 2;

[0029]FIG. 4 illustrates a step of affixing a protective tape to a semiconductor wafer;

[0030]FIG. 5 illustrates a step in the semiconductor device manufacturing process which follows the step of FIG. 4;

[0031]FIG. 6 illustrates a step in the semiconductor device manufacturing process which follows the step of FIG. 5;

[0032]FIG. 7 illustrates a back grinding step for the semiconductor wafer;

[0033]FIG. 8 illustrates an etching step for a back side of the semiconductor wafer;

[0034]FIG. 9 is a sectional view showing an affixed state of a die bonding film to the semiconductor wafer;

[0035]FIG. 10 illustrates a step of affixing the die bonding film to the back side of the semiconductor wafer;

[0036]FIG. 11 illustrates a step in the semiconductor device manufacturing process which follows the step of FIG. 10;

[0037]FIG. 12 illustrates a step in the semiconductor device manufacturing process which follows the step of FIG. 11;

[0038]FIG. 13 is a plan view showing an affixed state of a dicing tape to the semiconductor wafer;

[0039]FIG. 14 is a sectional view taken on line A-A in FIG. 13;

[0040]FIG. 15 illustrates a step of affixing the dicing tape to the semiconductor wafer;

[0041]FIG. 16 illustrates a step of peeling off the protective tape from the semiconductor wafer;

[0042]FIG. 17 illustrates a semiconductor wafer heating step;

[0043]FIG. 18 illustrates a semiconductor wafer dicing step;

[0044]FIG. 19 illustrates a step of decreasing the adhesion of the dicing tape;

[0045]FIG. 20 illustrates a die bonding step for a semiconductor chip;

[0046]FIG. 21 is a sectional view of the semiconductor device according to the above embodiment; and

[0047]FIG. 22 is a sectional view of a semiconductor device according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0048] Prior to describing the present invention in detail, meanings of terms used herein will be explained below.

[0049] 1. When mention is made of a substance name such as, for example PET (polyethylene terephthalate), it is to be understood that not only the substance referred to but also those containing the substance referred to (e.g., element, atomic group, molecule, polymer, copolymer, or compound) as a principal component or a composition component are included unless otherwise mentioned.

[0050] For example, when reference is made to a silicon region, there are included a pure silicon region, a region containing an impurity-doped silicon as a principal component, and a mixed crystal region containing silicon as a principal component, such as GeSi, unless otherwise mentioned. When reference is made to MOS, “M” is not limited to the pure metal, but there are also included polysilicon (including amorphous one) electrode, silicide layer, and other members exhibiting metal-like properties, unless otherwise mentioned. Furhter, when reference is made to MOS, “O” is not limited to an oxide film such as silicon oxide film, but there are also included nitride film, oxy-nitride film, alumina film, other normal dielectric, high dielectric and ferroelectric films, unless otherwise mentioned.

[0051] 2. As examples of wafer there are included silicon and other semiconductor single crystal substrates (generally disk-like ones, semiconductor wafer, semiconductor chips and pellets obtained by dividing them into unit integrated circuit regions, as well as their base regions) used in fabricating a semiconductor integrated circuit, sapphire substrate, glass substrate, other insulating, semi-insulating or semiconductor substrates, and composite substrates thereof.

[0052] The following embodiments will be described dividedly into plural sections or embodiments where required for the sake of convenience, unless otherwise mentioned, it is to be understood that they are not unrelated to each other, but one is in a relation of modification or detailed or supplementary explanation of part or the whole of the other.

[0053] When reference is made to, for example, the number of elements (including the number of pieces, numerical value, quantity, and range) in the following embodiments, no limitation is made to the specified number, but numbers above and below the specified number will do unless otherwise specified and except the case where limitation is made to the specified number basically clearly.

[0054] In the following embodiments, moreover, it goes without saying that their components (including constituent steps) are not always essential unless otherwise mentioned and except the case where they are considered essential basically clearly.

[0055] Likewise, in the following embodiments, it is to be understood that when reference is made to the shape and positional relation of a component, those substantially similar or closely similar thereto are also included unless otherwise mentioned and except the case where the answer is negative basically clearly. This is also true of the foregoing numerical value and range.

[0056] In all of the drawings for illustrating the embodiments, portions having the same functions are identified by like reference numerals, and repeated explanations thereof will be omitted.

[0057] Further, in the drawings used in the embodiments, even plan views may be hatched to make them easier to see.

[0058] Embodiments of the present invention will be described in detail hereinunder with reference to the accompanying drawings.

[0059]FIG. 1 is a process flow chart showing a process for fabricating a semiconductor device (semiconductor integrated circuit device) according to an embodiment of the present invention. FIGS. 2 and 3 are sectional views of steps in the semiconductor device manufacturing process of this embodiment.

[0060] First, as shown in FIG. 2, there is provided a wafer (a semiconductor substrate for fabricating a semiconductor integrated circuit) formed of a single crystal silicon for example or a semiconductor substrate 1. Then, plural semiconductor elements, e.g., MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), are formed on the semiconductor wafer 1 in accordance with a known semiconductor device manufacturing technique (step S1). The semiconductor elements formed on the semiconductor wafer 1 are not limited to MOSFETs, but various other semiconductor elements may be formed.

[0061] Next, as shown in FIG. 3, a protective tape (BG sheet, protective sheet) 2 for back grinding is affixed to a surface (a main surface on the semiconductor elements side of the semiconductor wafer 1: a first face) of the semiconductor wafer 1 (step S2). In a back grinding (BG: back grinding) step for the semiconductor wafer 1 to be described later, the protective tape 2 functions to protect the surface 1 a of the semiconductor wafer 1 or protect the semiconductor elements formed thereon and prevent warping of the semiconductor wafer 1 which becomes thinner by back grinding. It suffices for the protective tape 2 to have such a degree of strength as can prevent warping of the semiconductor wafer 1 at room temperature. One face of the protective tape 2 has stickiness (adhesion) and the protective tape 2 is affixed to the wafer so that its sticky face (sticky or adhesive face) comes into contact with the surface 1 a of the wafer 1. The protective tape 2 can be formed using any of various materials, e.g., a laminate of PET (polyethylene terephthalate) and EVA (ethylene-vinyl acetate copolymer), or vinyl chloride.

[0062] FIGS. 4 to 6 illustrate steps of affixing the protective tape 2 to the semiconductor wafer 1.

[0063] As shown in FIG. 4, a separator or a separator film 3 is affixed (laminated) to the sticky face of the protective tape 2 and in this state the protective tape 2 is wound round a protective tape delivery roll 4. The separator film 3 is fed from the protective tape delivery roll 4 to a take-up roll 5 and is wound round the take-up roll. The protective tape 2 after peel-off of the separator film 3 therefrom is fed to and wound round a protective tape take-up roll 9 through rollers 6, 7, and 8. The rollers 7 and 8 are constructed so as to be movable laterally (in a direction parallel to the main surface of the semiconductor wafer 1) in FIG. 4. The rollers 7 and 8 move laterally while pressing down the protective tape 2 onto the semiconductor wafer 1 disposed on a table 10 (disposed in such a manner that the surface 1 a side of the wafer faces upward), thereby affixing the protective tape 2 onto the wafer surface 1 a. Subsequently, a sheet cutter 11 moves down to above the semiconductor wafer 1 and, as shown in FIG. 5, cuts the protective tape 2 along an outer periphery (contour) of the wafer 1 with use of a blade 11 a of the sheet cutter 11. At this time, the sheet cutter 11 rotates, whereby the blade 11 a of the sheet cutter 11 moves along the outer periphery of the wafer 1 and cuts the protective tape 2 along the outer periphery of the wafer 1. Thereafter, the sheet cutter 11 moves up and, as shown in FIG. 6, the rollers 7 and 8 move laterally, so that the portion of the protective tape 2 other than its bonded portion to the semiconductor wafer 1 (the protective tape 2 in a gouged-out state of its portion bonded to the wafer 1) is separated from the wafer 1 and is wound up onto the protective tape take-up roll 9. As a result, the protective tape 2 remains affixed (bonded) onto the surface 1 a of the semiconductor wafer 1.

[0064] After the protective tape 2 is thus affixed onto the surface (first face) 1 a of the semiconductor wafer 1, the opposite side to the surface 1 a of the wafer 1, i.e., a back side (a second face)1 b is subjected to grinding (step S3), thereby reducing the thickness of the semiconductor wafer 1. FIG. 7 is an explanatory diagram of a back grinding step for the semiconductor wafer 1.

[0065] As shown in FIG. 7, the surface 1 a side of the semiconductor wafer 1 with the protective tape 2 affixed thereto is held by a BG chuck table 21 and the back side (second face) 1 b of the wafer 1 is subjected to grinding (polishing). For example, this can be done by rotating the semiconductor wafer 1 held by the BG chuck table 21 and placing a rotating grinding wheel 23 into pressure contact with the wafer 1 under the supply of grinding water 22 such as pure water to grind off (polish) the back side 1 b of the wafer 1.

[0066] Next, if necessary, the back side 1 b of the semiconductor wafer 1 is etched using an etching solution (step S4), whereby the wafer back side 1 b is cleaned and flattened. FIG. 8 illustrates an etching step for the wafer back side 1 b.

[0067] As shown in FIG. 8, the surface 1 a side of the semiconductor wafer 1 with the protective tape 2 affixed thereto is held by an etcher chuck table 24 and the back side 1 b of the semiconductor wafer 1 is etched. For example, the etching is carried out by rotating the semiconductor wafer 1 held by the etcher chuck table 24 and supplying an etching solution 25 such as a mixed solution of hydrofluoric acid and nitric acid from a nozzle 26 onto the back side 1 b of the wafer to etch the back side 1 b. The etching solution 25 thus fed onto the wafer back side 1 b from the nozzle 26 is recovered from an etching solution recovery window 27. The etching step for the wafer back side 1 b may be omitted.

[0068] Then, a die bonding film 30 is affixed to the back side 1 b of the semiconductor wafer (step S5). FIG. 9 is a sectional view showing an affixed state of the die bonding film 30 to the semiconductor wafer 1. As will be described later, the die bonding film 30 functions as a bonding layer (adhesive layer) for die bonding each semiconductor chip after dicing the semiconductor wafer 1 into semiconductor chips (chips).

[0069] The step of affixing the die bonding film 30 to the back side 1 b of the semiconductor wafer 1 will be described below in more detail with reference to FIGS. 10 to 12.

[0070] As shown in FIG. 10, at the time of affixing the die bonding film 30 to the wafer back side 1 b, there is used a sheet (laminate) 32 comprising the die bonding film 30 and a separator or a separator film 31 affixed thereto. For example, the separator film 31 is formed of polyester or PET. The separator film 31 is relatively rigid (hard) and has stiffness, and may be made relatively thick, e.g., 100 μm or so. The die bonding film 30 is formed using a thermoplastic resin material, e.g., polyimide, as a principal component. The die bonding film 30 is relatively thin and soft, the thickness of which may be set at, for example, 25 μm or so.

[0071] The sheet (laminate sheet) 32 comprising the die bonding film 30 and the separator film 31 is wound round a die bonding film delivery roll 33. The sheet 32 wound round the die bonding film delivery roll 33 is fed from the delivery roll 33 through rollers 34 and 35, and on the roller 35 it is peeled, or separated, to the die bonding film 30 and the separator film 31. The die bonding film 30 is then wound round a die bonding film take-up roll 36, while the separator film 30 is wound round a separator take-up roll 37. The roller 35 is constructed so as to be movable laterally (in a direction parallel to the main surface of the semiconductor wafer 1) in FIG. 10. The roller 35 moves laterally while pressing down the sheet 32 onto the back side 1 b of the semiconductor wafer 1 disposed on a table 38 (disposed in such a manner that the back side 1 b of the wafer 1 faces upward), allowing the sheet 32 to be affixed onto the wafer back side 1 b. At this time, care must be exercised so that the die bonding film 30 side of the sheet 32 comes into contact with the wafer back side 1 b. That is, the sheet 32 comprising the die bonding film 30 and the separator film 31 is affixed to the wafer back side 1 b in such a manner that the die bonding film 30 is positioned inside.

[0072] Next, as shown in FIG. 11, the roller 35 moves (in a direction opposite to its moving direction for affixing the sheet 32), so that the separator film 31 is wound up by the separator take-up roll 37 and is peeled off from the die bonding film 30. As a result, only the die bonding film 30 remains present on the wafer back side 1 b. Then, a sheet cutter 39 moves down onto the semiconductor wafer 1 and cuts the die bonding film 30 along the outer periphery (contour) of the semiconductor wafer 1 with use of blade 39 a. In this cutting operation, the sheet cutter 39 rotates, so that the blade 39 a of the sheet cutter 39 moves along the outer periphery of the semiconductor wafer 1 and cuts the die bonding film 30 along the outer periphery of the wafer.

[0073] After cutting the die bonding film 30, the sheet cutter 39 rises and, as shown in FIG. 12, with a winding operation of the die bonding film take-up roll 36, the portion of the die bonding film 30 other than its portion bonded to the semiconductor wafer 1 (the die bonding film 30 in a gouged-out state of its portion bonded to the wafer 1) is separated from the wafer 1 and is wound up by means of the die bonding film take-up roll 36. Thus, the die bonding film 30 remain affixed (bonded) onto the back side 1 b of the semiconductor wafer 1. Then, using a heater (not shown) (for example, a heater built within the table 38), the semiconductor wafer 1 is heated, allowing the wafer 1 and the die bonding film 30 to be bonded together temporarily. At this time, the heating temperature (first temperature) is relatively low and is, for example, 100° C. or so. Since the heating temperature for the temporary bonding of the semiconductor wafer 1 and the die bonding film 30 is thus relatively low, there is no fear of warping of the protective tape 2 affixed to the wafer surface 1 a. Thus, it is possible to prevent warping of the semiconductor wafer 1. The temporary bonding means a bonding which is effected using such a degree of bonding force as prevents the semiconductor wafer 1 and the die bonding film 30 from peeling off each other in subsequent steps (up to a heating step at a second temperature to be described later) or during conveyance during manufacturing steps. The heating step for the temporary bonding may be omitted if the adhesion between the die bonding film 30 and the semiconductor wafer 1 is ensured to some extent even without heating.

[0074] In this embodiment, as described above, the die bonding film 30, together with the separator film 31, is affixed to the back side 1 b of the semiconductor wafer 1, thereafter only the separator film 31 is peeled off and the die bonding film 30 is cut into a predetermined shape. If the die bonding film 30 alone is affixed onto the back side 1 b of the semiconductor wafer 1, since the die bonding film 30 is relatively thin and soft, the die bonding film affixed to the wafer back side will be wrinkled and hence air bubbles are apt to enter between the die bonding film 30 and the semiconductor wafer 1. Upon such wrinkling of the die bonding film 30 affixed to the semiconductor wafer 1 or entry of air bubbles, it is not easy to peel off the die bonding film 30 (peel off the die bonding film 30 and re-affix another die bonding film to the wafer), resulting in that the whole of the semiconductor wafer 1 becomes defective and is no longer employable in the fabrication of the semiconductor device. This causes a marked lowering of the semiconductor device manufacturing yield and an increase of the semiconductor device manufacturing cost. In this embodiment, since the die bonding film 30 is affixed to the back side 1 b of the semiconductor wafer 1 together with the separator film 31 which is relatively hard and stiff, it is possible to prevent wrinkling of the die bonding film 30 affixed to the wafer back side 1 b. It is also possible to prevent the entry of air bubbles between the semiconductor wafer 1 and the die bonding film 30. Besides, since the separator film 31 is peeled off before cutting the die bonding film 30, the thickness of the separator film 31 can be made relatively large. It is easy to make the separator film 31 relatively rigid (hard) to facilitate the prevention of wrinkling of the die bonding film 30. In this embodiment, moreover, since the die bonding film 30 contains a thermoplastic resin as a principal component, only the separator film 31 can be peeled off after affixing the sheet 32 to the semiconductor wafer 1.

[0075] In the case where the die bonding film 30 is affixed to the back side 1 b of the semiconductor wafer 1 after peel-off of the protective tape 2 from the semiconductor wafer 1, the wafer 1 will be warped as a result of the protective tape 2 having been peeled off from the wafer 1, and the die bonding film 30 is affixed to the thus-warped wafer. Consequently, the die bonding film 30 affixed to the wafer back side 1 b is apt to be wrinkled. In this embodiment, however, with the protective tape 2 affixed to the wafer surface 1 a, the die bonding film 30 is affixed to the wafer back side 1 b. Thus, the die bonding film 30 can be affixed to the wafer back side while warping of the wafer 1 is suppressed by the protective film 2. Accordingly, it is possible to prevent more positively the occurrence of wrinkles in the die bonding film 30 affixed to the wafer back side 1 b.

[0076] After the die bonding film 30 has thus been affixed to the back side 1 b of the semiconductor wafer 1, a dicing tape (wafer sheet) 40 is affixed to the wafer back side 1 b (the face with the die bonding film 30 affixed thereto: second face) (wafer mounting: step S6). FIG. 13 is a plan view (top view) showing an affixed state of the dicing tape 40 to the semiconductor wafer 1 and FIG. 14 is a sectional view taken on line A-A in FIG. 13.

[0077] The dicing tape 40 is a tape (sheet) one face of which has stickiness and extensibility, and the back side 1 b of the semiconductor wafer 1 is affixed to the face having stickiness (sticky face). Therefore, the dicing tape 40 is affixed onto the die bonding film 30 lying on the wafer back side 1 b. The dicing tape 40 is held by a holding jig (carrier jig, carrier ring, and frame: holding means) 41 disposed around the semiconductor wafer 1. For example, the holding jig 41 is formed of a metallic material (e.g., SUS) and is in the shape of a ring larger than the wafer 1. The dicing tape 40 functions to hold cut pieces (semiconductor chips) after a dicing step for the wafer 1 which will be described later.

[0078]FIG. 15 illustrates a step of affixing the dicing tape 40 to the semiconductor wafer 1. As shown in the same figure, the dicing tape 40 is affixed to the back side 1 b of the semiconductor wafer 1 and a holding jig 41, which is larger tan the wafer 1 and is ring-like for example, is affixed around the wafer 1. In order to enhance the adhesion between the semiconductor wafer 1 and the dicing tape 40, the dicing tape 40 affixed to the back side 1 b (die bonding film 30) of the wafer 1 disposed on a table 42 is pressed down with an affixing roller 43. The holding jig 41 may be affixed to the dicing tape 40 after affixing the semiconductor wafer 1 to the dicing tape 40, but, after affixing the dicing tape 40 to the holding jig 41, the wafer back side 1 b may be affixed to the dicing tape 40 held by the holding jig 41.

[0079] Next, the protective tape 2 is peeled off from the surface 1 a of the semiconductor wafer 1 (step S7). FIG. 16 illustrates a step of peeling the protective tape 2 from the semiconductor wafer 1.

[0080] As shown in FIG. 16, a release tape 52, which is wound round a release tape delivery roll 51, is delivered through rollers 53 and 54 and is wound up onto a release tape take-up roll 55. One face of the release tape 52 has high stickiness (stronger than that of the sticky face of the protective face 2) and this sticky face is pressed down and affixed to the surface 1 a of the semiconductor wafer 1, that is, to the protective tape 2 by means of the roller 54 which moves laterally (in a direction parallel to the main surface of the semiconductor wafer 1) in FIG. 16. Then, the roller 54 moves (in a direction opposite to affixing direction of the release tape 52), whereby the release tape 52 is wound up onto the release tape take-up roll 55. At this time, since the face of the release tape 52 in contact with the protective tape 2 has high stickiness, the protective tape 2 peels off from the semiconductor wafer 1 together with the release tape 52. Thus, the protective tape 2 can be peeled off from the wafer surface 1 a and therefore the wafer surface (semiconductor elements-formed face) 1 a is exposed.

[0081] Next, in order to enhance (improve) the adherence between the semiconductor wafer 1 and the die bonding film 30, the wafer 1 (the die bonding film 30) is heated to a second temperature (step S8). FIG. 17 illustrates a heating step for the semiconductor wafer 1.

[0082] As shown in FIG. 17, the semiconductor wafer 1 affixed to the dicing tape 40 which is held by the holding jig 41, is heated with a heater 60. At this time, the heating temperature (second temperature) is higher than the heating temperature (first temperature) which is for temporarily bonding the semiconductor wafer 1 and the die bonding film 30 with each other, and is about 80° C. for example (the heating time is, for example, 2 seconds or so). With this heating, the die bonding film 30 which contains a thermoplastic resin material as a principal component softens and thereafter becomes hard (cures) by cooling, whereby the semiconductor wafer 1 and the die bonding film 30 come into close contact with each other.

[0083] Since this heating step is carried out at a relatively high temperature (second temperature: for example, 180° C.), warping of the semiconductor wafer 1 is apt to occur. Consequently, if heating to the second temperature is conducted after affixing the die bonding film 30 to the semiconductor wafer 1 and before affixing of the dicing tape 40, there arises a fear of warping of the wafer 1. If the warping occurs, it will cause cracking of the wafer 1 in subsequent steps or during conveyance. In this embodiment, the heating to the second temperature is performed after affixing of the dicing tape 40. Thus, the heating to the second temperature is conducted in a state in which the semiconductor wafer 1 is affixed to the dicing tape 40 held by the holding jig 41. Since the dicing tape 40 held by the holding jig 4 holds (reinforces) the semiconductor wafer 1 affixed thereto, it is possible to surely prevent warping of the wafer in the heating step.

[0084] In this embodiment, moreover, since the protective tape 2 is peeled off before this heating step (heating at the second temperature), a highly heat-resistant material need not be used for the protective tape 2. For example, even if the protective tape 2 is formed using such a material as is deformed at the second temperature, there is no fear from the semiconductor wafer 1 being warped due to the protective tape 2, because the heating to the second temperature is performed in the absence (after peel-off) of the protective tape 2. The protective tape peeling step may be carried out after this heating step and in this case it is preferred that the protective tape 2 be formed using a material high in heat resistance and difficult to be deformed even at the second temperature. If the protective film 2 is formed using such a material, it is possible to prevent warping of the semiconductor wafer 1 caused by deformation of the protective film 2 or prevent the protective tape 2 from becoming difficult to be peeled off. It is more preferable that the dicing tape 40 be formed using a material which can withstand (difficult to be deformed) at the second temperature.

[0085] Next, the semiconductor wafer 1 is subjected to dicing (step S9). FIG. 18 illustrates a dicing step for the semiconductor wafer 1.

[0086] As shown in FIG. 18, the semiconductor wafer 1 affixed to the dicing tape 40 disposed on a table 71 and held by the holding jig 41 is diced or cut from it surface 1 a side with use of a blade (dicing blade) 73 which is rotated at high speed by means of a spindle 72 of a dicing apparatus. On the semiconductor wafer 1 there are formed plural semiconductor elements (not shown), and the wafer 1 is diced along a scribing area (scribing line) between adjacent semiconductor elements-formed areas. In FIG. 18, the dicing tape 40 is diced or cut halfway in its depth. As a result of dicing, the semiconductor wafer 1 is separated into chip areas (unit integrated circuit areas) or merely into chips (unit integrated circuits area or base portions thereof) or semiconductor chips (chips) 80, which are held by the dicing tape 40. The dicing depth may be halfway of the die bonding film 30 or halfway of the semiconductor wafer 1. There also may be adopted such a dicing method as a half-cut method wherein the wafer 1 is diced to about half of its depth, a semi-full cut method wherein the wafer 1 is diced while allowing only a slight depth portion of the wafer to remain undiced, or a full-cut method wherein the wafer 1 is cut completely.

[0087] Next, a process for lowering the adhesion (stickiness) of the dicing tape 40 is carried out. For example, the dicing tape 40 is made less adhesive by the application of ultraviolet light (UV) thereto (step S10). FIG. 19 illustrates the process for lowering the adhesion of the dicing tape 40.

[0088] As shown in FIG. 19, using a UV irradiator or a UV lamp (ultraviolet lamp) 81, ultraviolet light (UV) is applied to the diced semiconductor wafer 1 affixed to the dicing tape 40 which is held by the holding jig 41. Ultraviolet light emitted from the UV lamp 81 is applied to the dicing tape 40 directly or after reflected by a reflector 82. In this embodiment, a material adapted to become less adhesive with ultraviolet light is used as the material of the dicing tape 40 (or the adhesive layer of the dicing tape 40). As said material there is used, for example, an ultraviolet curing resin. With this material, the bonding strength of the dicing tape 40, i.e., the strength of bonding between the dicing tape 40 and the die bonding film 30, can be lowered.

[0089] Next, the semiconductor chips (chips) 80 are subjected to die bonding (step S11). FIG. 20 illustrates a die bonding step for the semiconductor chips 80.

[0090] As described above, the semiconductor wafer 1 is separated into plural semiconductor chips 80 by the dicing step and the chips 80 (as well as the die bonding film 30 affixed to the back side of each chip) are rendered less adhesive to the dicing tape 40 by ultraviolet radiation. As shown in FIG. 20, the semiconductor chip 80 is chucked with a collet 90 of a die bonder (a die bonding apparatus) and is disposed (mounted) at a predetermined position on a wiring substrate 91. For chucking each semiconductor chip 80 with the collet 91 from the diced semiconductor chip 1 and conveying the chip, a needle-like pin 92 is plunged up (chip plunge-up) from the back side (dicing tape 40 side) of the semiconductor wafer 1, causing the chip 80 to be separated and chucked. The semiconductor chip 80 is then disposed on the wiring substrate 91 in such a manner that its back side (the bonded side of the die bonding film 30: second face side) faces the wiring substrate 91 (lower side). Thus, the chip 80 is disposed on the wiring substrate 91 through the die bonding film 30.

[0091] Only one semiconductor chip 80 may be mounted on the wiring substrate 91, but, as shown in FIG. 20, another semiconductor chip (semiconductor device) 80 may be first disposed on the wiring substrate 91 and then the semiconductor chip 80 may be disposed on the semiconductor chip 80 a. The semiconductor chip 80 a can be fabricated in the same way ad the semiconductor chip 80 and a die bonding film 30 a, which is the same as the die bonding film 30, is affixed to the back side of the chip 80 a. The number of semiconductor chips stacked (laminated) onto the wiring substrate 91 may be an arbitrary number.

[0092] Next, the wiring substrate 91 with the semiconductor chips 80 and 80 a mounted thereon is heated to a predetermined temperature (for example, about 180° C.) (that is, the die bonding films 30 and 30 a are heated) to soften the die bonding films 30 and 30 a, thereby allowing the semiconductor chip 80 to be bonded to the semiconductor chip 80 a through the die bonding film 30 and allowing the semiconductor chip 80 a to be bonded to the wiring substrate 91 through the die bonding film 30 a. Thereafter, cooling is performed to harden the die bonding films 30 and 30 a, allowing the semiconductor chip 80 to be fixed to the semiconductor chip 80 a through the die bonding film 30 and allowing the semiconductor chip 80 a to be fixed to the wiring substrate 91 through the die bonding film 30 a. In the case where the semiconductor chip 80 is mounted directly on the wiring substrate 91, the die bonding film 30 is heated and softened, then cooled and hardens, whereby the semiconductor chip 80 is fixed directly to the wiring substrate 91 through the die bonding film 30.

[0093] If the die bonding of the semiconductor chip is performed using silver paste or the like without using the die bonding film 30, since such an adhesive as silver paste which contains an organic solvent is applied to the back side of the semiconductor chip, there is a fear that the organic solvent may vaporize and diffuse within a clean room, thus giving rise to a problem in point of working environment. Besides, the manufacturing process becomes complicated because an adhesive such as silver paste is applied to the back of the semiconductor chip, followed by bonding to the wiring substrate, with a consequent increase of the semiconductor chip manufacturing cost. As described above, in the case where another semiconductor chip is mounted onto the semiconductor chip (in case of stacking plural semiconductor chips), silver paste for bonding the overlying semiconductor chip to the underlying semiconductor chip is likely to spread to the electrode pads, which would deteriorate the reliability of the semiconductor device. In this embodiment, die bonding of the semiconductor chip 80 is carried out using the die bonding film 30, so that the problem associated with the working environment is eliminated; besides, the operability is improved and the manufacturing process is simplified. It is also easy to stack plural semiconductor chips. Consequently, the reliability of the semiconductor device is improved. Further, the semiconductor device manufacturing yield is improved and it becomes possible to reduce the semiconductor device manufacturing cost.

[0094] As shown in FIG. 21, after the die bonding step described above, electrode pads on the surfaces of the semiconductor chips 80 and 80 a and wiring on the wiring substrate 91 are mutually connected electrically through bonding wires 92 and 92 a. Then sealing resin (molding resin) 93 are formed on the wiring substrate 91 so as to cover the semiconductor chips 80, 80 a and the bonding wires 92, 92 a, and solder balls 94 or the like are formed as external connecting terminals on the bottom of the wiring substrate 91, followed by cutting the wiring substrate 91 if necessary. In this way there is fabricated such a semiconductor device 100 of this embodiment as shown in FIG. 21.

[0095] The semiconductor device 100 shown in FIG. 21 is fabricated on the wiring substrate 91 in the same way as the semiconductor chip 80 and it is a two-stage stack type semiconductor device wherein the semiconductor chip 80 and the semiconductor chip 80 a different in external dimensions from the semiconductor chip 80 are stacked on the wiring substrate 91. As the semiconductor chips 80 and 80 a there may be used semiconductor chips formed with various semiconductor elements as necessary. For example, the underlying (lower-stage) semiconductor chip 80 a is a SRAM of 8 M and the overlying (upper-stage) semiconductor chip 80 is a SRAM of 4 M. In the semiconductor device 100 shown in FIG. 21, both overlying and underlying semiconductor chips 80, 80 a are electrically connected to (wires on) the wiring substrate 91 through bonding wires 92 and 92 a, but the underlying semiconductor chip 80 a may be electrically connected to (wires on) the wiring substrate 91 by flip chip connection for example.

[0096] In such a semiconductor device (multi-stage stack type semiconductor device) having a plurality of stacked semiconductor chips, it is necessary to make the thickness of each semiconductor chip relatively small in order to suppress an increase in thickness of the semiconductor device caused by stacking plural semiconductor chips. For example, in the semiconductor device 100 shown in FIG. 21, length and width are each 6.5 mm or so, the size in the thickness direction is about 1.4 mm, and the thickness of each of the semiconductors 80 and 80 a is about 150 μm. For fabricating such relatively thin semiconductor chips 80 and 80 a it is necessary to thin the semiconductor wafer (for example to 150 μm or so). However, if the semiconductor wafer is thinned by back grinding for example, the wafer becomes easier to warp and is therefore cracked or chipped easily, resulting in the semiconductor device manufacturing yield being decreased. In this embodiment, after affixing the protective tape 2 to the semiconductor wafer 1 and up to the dicing step, the semiconductor wafer 1 is in a state of being held (fixed or reinforced) by the dicing tape 40 and thus it is possible to suppress or prevent warping of the wafer 1. In this embodiment, moreover, the die bonding film 30 is affixed to the back side 1 b of the semiconductor wafer 1 in an affixed state of the protective tape 2 to the surface 1 a of the semiconductor wafer, and after the wafer 1 is affixed and fixed to the dicing tape 40 (held by the holding jig 41), heating is conducted for improving the adherence (adhesion) between the wafer 1 and the die bonding film 30, so that warping of the wafer 1 caused by heating is prevented. Therefore, even if the semiconductor wafer 1 is made thin by back grinding, the wafer 1 little warps and thus it is possible to prevent cracking or chipping of the wafer in each manufacturing step or during conveyance between manufacturing steps. Consequently, it is possible to improve the manufacturing yield of semiconductor chips (semiconductor devices) fabricated from the semiconductor wafer 1 and of the semiconductor devices with semiconductor chips mounted thereon, thus permitting reduction of their manufacturing cost. It becomes also possible to reduce the size and thickness of each semiconductor device.

[0097]FIG. 22 shows a four-stage stack type semiconductor device 100 a with four semiconductor chips 80 b to 80 e stacked thereon. The semiconductor chips 80 b to 80 e stacked on the wiring substrate 91 can be fabricated in the same way as the semiconductor chip 80 and are subjected to die bonding with use of die bonding films 30 b to 30 e which are the same as the die bonding film 30.

[0098] In the semiconductor device 100 a shown in FIG. 22, the semiconductor chip 80 b is mounted on the wiring substrate 91, a spacer 101 is mounted on the semiconductor chip 80 b, and the semiconductor chips 80 c to 80 e are mounted in this order onto the spacer 101. Electrode pads on the semiconductor chips 80 b to 80 e are electrically connected to electrode pads on the wiring substrate 91 through bonding wires 92 b to 92 e. As the semiconductor chips 80 b to 80 e there may be used semiconductor chips formed with various semiconductor elements as necessary. For example, the semiconductor chip 80 b is a flash memory of 64 M, the semiconductor chip 80 c is a flash memory of 32 M, the semiconductor chip 80 d is a SRAM of 8 M, and the semiconductor chip 80 e is a PSRAM of 32 M. As the spacer 101 there may be used, for example, a chip obtained by dicing a semiconductor element-free semiconductor wafer into a predetermined shape. The spacer 101 is mounted on the semiconductor chip 80 b through a die bonding film 102.

[0099] For example, in order to prevent the bonding wires 92 b connected to the semiconductor chip 80 b from contacting the semiconductor chip 80 c, the spacer 101 is inserted between both chips 80 b and 80 c and has external dimensions smaller than the chips 80 b and 80 c. The insertion of the spacer 101 between the semiconductor chips 80 b and 80 c is effective for example in the case where external dimensions of the chip 80 b and those of the chip 80 c are similar to each other.

[0100] The semiconductor device 100 a is, for example, about 10 mm long, 11.5 mm wide, and 1.4 mm thick. Since the semiconductor device 100 a shown in FIG. 22 is larger in the number of stacked semiconductor chips (and spacer) than the semiconductor device 100 shown in FIG. 21, the semiconductor chips 80 b to 80 e and the spacer 101 are relatively thin and are each about 90 μm thick for example. Therefore, in case of fabricating the semiconductor device 100 a (semiconductor chips 80 b to 80 e), it is necessary to back-grind the semiconductor wafer thinner (for example, to about 90 μm). According to the semiconductor device fabricating method of the present invention, even in the case where the semiconductor wafer is made extremely thin, it is possible to prevent warping and cracking of the wafer and hence possible to improve the manufacturing yield of semiconductor chips fabricated from the wafer and of semiconductor devices using the chips. Accordingly, it is possible to reduce the cost for the fabrication of semiconductor chips and semiconductor devices.

[0101] The manufacturing process of this embodiment is suitable for the fabrication of retaltively thin semiconductor chips (semiconductor devices), for example, suitable in case of fabricating semiconductor chips (semiconductor devices) of about 200 μm or less in thickness by grinding a semiconductor wafer to a thickness of about 200 μm or less in thickness. If the thickness of a semiconductor wafer is about 200 μm or less, the wafer is apt to warp, but according to this embodiment it is possible to suppress warping of the semiconductor wafer and fabricate a semiconductor device. Also in case of fabricating a semiconductor device by stacking plural semiconductor chips (on a wiring substrate or the like), the application of the semiconductor device manufacturing process according to this embodiment is very effective because each semiconductor chip is relatively thin.

[0102] Although the present invention has been described above concretely by way of embodiments thereof, it goes without saying that the present invention is not limited to the above embodiments, but that various changes may be made within the scope not departing from the gist of the invention.

[0103] The following is a brief description of effects obtained by typical modes of the invention disclosed herein.

[0104] A protective tape is affixed to a first face of a wafer, a second face of the wafer lying on the side opposite to the first face is subjected to grinding, a die bonding film is affixed to the second face of the wafer, a dicing tape is affixed onto the die bonding film on the second face of the wafer, then the protective tape is peeled off from the first face of the wafer and the water is subjected to dicing, whereby it is possible to prevent warping of the wafer.

[0105] A laminate of a die bonding film and a separator film is affixed to the back side of the wafer so that the die bonding film faces inside, then the separator film is peeled off and the die bonding film is cut along the outer periphery of the wafer, whereby it is possible to prevent wrinkling of the die bonding film. 

What is claimed is:
 1. A method of fabricating a semiconductor device, comprising the steps of: (a) providing a wafer having a plurality of semiconductor elements formed thereon; (b) affixing a protective tape to a first face of the wafer; (c) grinding a second face of the wafer opposite to the first face; (d) affixing a die bonding film to the second face of the wafer; (e) affixing a dicing tape over the die bonding film on the second face of the wafer; (f) peeling off the protective tape from the first face of the wafer; and (g) dicing the wafer.
 2. The method according to claim 1, wherein the die bonding film contains a thermoplastic resin material.
 3. The method according to claim 1, wherein the first face of the wafer is a face on which the plural semiconductor elements are formed.
 4. The method according to claim 1, wherein the die bonding film functions as an adhesive layer at the time of die-bonding chips obtained by dicing the wafer.
 5. The method according to claim 1, further comprising a step of heating the die bonding film after the step (e) and before the step (f).
 6. The method according to claim 1, further comprising a step of heating the die bonding film after the step (f) and before the step (g).
 7. The method according to claim 1, further comprising, after the step (e) and before the step (f), a step of heating the die bonding film for improving the adherence between the die bonding film and the wafer.
 8. The method according to claim 1, further comprising, after the step (f) and before the step (g), a step of heating the die bonding film for improving the adherence between the die bonding film and the wafer.
 9. The method according to claim 1, further comprising the steps of: heating the die bonding film to a first temperature after the step (d) and before the step (e); and heating the die bonding film to a second temperature higher than the first temperature after the step (e) and before the step (f).
 10. The method according to claim 1, further comprising the steps of: heating the die bonding film to a first temperature after the step (d) and before the step (e); and heating the die bonding film to a second temperature higher than the first temperature after the step (f) and before the step (g).
 11. The method according to claim 1, wherein, in the step (e), the dicing tape is held by a holding means disposed around the wafer, and wherein, in the step (g), the wafer affixed to the dicing tape held by the holding means is diced.
 12. The method according to claim 1, wherein, in the step (c), the wafer is ground to a thickness of not larger than 200 μm.
 13. The method according to claim 1, wherein the step (d) comprises the steps of: (d1) affixing a laminate of the die bonding film and a separator film to the second face of the wafer in such a manner that the die bonding film faces inside; (d2) peeling off the separator film; and (d3) cutting the die bonding film along an outer periphery of the wafer.
 14. A method of fabricating a semiconductor device, comprising the steps of: (a) providing a wafer having a plurality of semiconductor elements formed thereon; (b) affixing a laminate of a die bonding film and a separator film to a back side of the wafer so that the die bonding film faces inside; (c) peeling off the separator film; and (d) cutting the die bonding film along an outer periphery of the wafer.
 15. The method according to claim 14, wherein the die bonding film contains a thermoplastic resin material.
 16. The method according to claim 14, wherein the separator film is harder than the die bonding film.
 17. The method according to claim 14, wherein the die bonding film functions as an adhesive layer at the time of die-bonding chips obtained by dicing the wafer.
 18. A method of fabricating a semiconductor device, comprising the steps of: (a) providing a wafer having a plurality of semiconductor elements formed thereon; (b) affixing a protective tape to a first face of the wafer; (c) grinding a second face of the wafer opposite to the first face; (d) affixing a laminate of a die bonding film and a separator film to the second face of the wafer so that the die bonding film faces inside; (e) peeling off the separator film; (f) cutting the die bonding film along an outer periphery of the wafer; (g) affixing a dicing tape over the die bonding film on the second face of the wafer; (h) peeling off the protective tape from the first face of the wafer; and (i) dicing the wafer.
 19. The method according to claim 18, wherein the die bonding film contains a thermoplastic resin material.
 20. The method according to claim 18, wherein the die bonding film functions as an adhesive layer at the time of die-bonding chips obtained by dicing the wafer in the step (i). 